|
|
近场太赫兹成像系统（near field THz microprobe)THz太赫兹成像
|
系统特点
|
|
系统特点
|
|
实现微米级空间分辨率(up to 3 μm)
|
|
工作频率覆盖0-4THz
|
|
可以配合现有THz光源使用( λ < 860 nm, 1-5 mW)
|
|
|
应用领域
|
|
应用领域
|
|
Terahertz research: Metamaterials, plasmonics, graphene, waveguides
|
|
High-resolution Terahertz near-field imaging
|
|
Contact-free sheet resistance imaging of semiconductors
|
|
MMIC device characterization
|
|
Non-destructive chip inspection
|
|
Time-domain reflectometry (TDR)
|
|
|
系统配置图
|
|
|
系统技术指标
|
|
系统技术指标
|
|
Item
|
MKR-HR
|
MKR-HS
|
|
Max. spatial resolution
|
3μm
|
100μm
|
|
Photoconductive gap size at tip
|
1.5μm
|
3μm
|
|
Dark current @ 1V Bias
|
< 0.5 nA
|
< 0.4 nA
|
|
Photocurrent
|
> 1 μA
|
> 0.6 μA
|
|
Excitation wavelength
|
700nm ... 860 nm
|
|
Excitation power
|
1mW ... 4 mW
|
|
Connection type
|
SMP
|
|
|
|
系统应用实例
|
|
采用近场测量在二氧化硅上石墨烯的电导率不均匀性
|
|
|
|
|
|
采用近场测量得到的脉冲激励太赫兹材料图像
|
|
|
|
